savantic semiconductor product specification silicon npn power transistors 2SC3255 d escription with to-220 package complement to type 2sa1291 low collector saturation voltage high speed switching time applications high current switching applications power amplifications invertrers ,converters pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter 80 v v ceo collector- emitter voltage open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i cm collector current-peak 12 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3255 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector -emitter breakdown voltage i c =1ma ,i b = ; 60 v v (br)cbo collector-base breakdown voltage i c =1ma ,i e =0 80 v v (br)ebo emitter-base breakdown voltage i e =1ma ,i c =0 5 v v cesat collector-emitter saturation voltage i c =5a; i b =0.25a 0.4 v i cbo collector cut-off current v cb =40v; i e =0 100 a i ebo emitter cut-off current v eb =4v; i c =0 100 a h fe dc current gain i c =1a ; v ce =2v 70 280 f t transition frequency i c =1a ; v ce =5v 100 mhz switching times t on turn-on time 0.1 s t s storage time 0.5 s t f fall time i c =5.0a i b1 =- i b2 =0.25a r l =6.67 c ;v cc d 20v 0.1 s h fe classifications q r s 70-140 100-200 140-280
savantic semiconductor product specification 3 silicon npn power transistors 2SC3255 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC3255
|
